IJIRCSTJournal International Journal of Innovative Research in Computer Science and Technology I S Volume 5 Issue 2 Information Technology English March - April 2017 N N Y 2019 12 07 Computer Sciences Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure English Y 230 233 Ziwei Cui English Y https://doi.org/10.21276/ijircst.2017.5.2.3 Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties. English Electronic properties, Wurtzite silicon (WZ-Si), Uniaxial pressure https://ijircst.org/abstract.php?article_id=290