Volume- 5
Issue- 2
Year- 2017
DOI: 10.21276/ijircst.2017.5.2.3 |
DOI URL: https://doi.org/10.21276/ijircst.2017.5.2.3
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This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)
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Ziwei Cui
Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.
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